Offer

SAFC Hitech provides unique chemistry service translating an in-depth understanding of silicon semiconductor performance requirements into the materials required to achieve them.

Through collaborative partnerships and an integrated approach from research and development, process development and scale up to commercial manufacturing, SAFC Hitech invests in innovation and manufacturing, enabling current and future technology needs.

SAFC Hitech continues to develop its material program by adhering to the ITRS roadmap for logic and memory devices. In addition, early engagement provides us insight in to the issues facing the customers. We respond by designing the molecules that can deliver the next-generation performance and/or solve the issues in the fab processes.

Our early success in materials and delivery systems for high-K oxides such as Al₂O₃ lead us to the development of High Volume Manufacturing processes for high purity materials for hafnium and zirconium oxides, including some hitherto unknown materials that offered improved process performance in the fabs.

SAFC Hitech continues its material development program for the next generation materials for applications in ultra high K oxides/nitrides, metal gates and gate oxides; front and back end metallization for use in MOCVD, CVD, ALD, and spin-on processes. We are proud member of the SEMI Standards committee with SAFC Hitech representatives chairing the Precursor Sub-group.

For information on the ITRS Reports in the areas we focus visit the ITRS website's reports page, under the 2005 Edition and the 2006 update. Look under Front End Processes or Interconnect sections of the report.