Dimethylzinc — DMZn

SAFC Hitech® Dimethylzinc is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg.

DMZ
DMZn
Me₂Zn
(CH3)2Zn
Zn(CH3)2
Dimethylzinc

Dimethylzinc (DMZn) has been demonstrated to be useful as a II-VI source material, however its main application is as a p-type dopant of III-V alloys. The high V.P. of this material (<300mmHg @ 20°C) necessitates cooling (-10 - 0°C) of the source container to access more useful ranges.

Although used in ZnO deposition, DMZn is more commonly used in ZnSe/ZnS/ZnTe based growth systems. In both cases pre-reaction issues must be addressed by careful choice of the whole precursor system along with reactor geometry. The usage of adducting compounds in the gas phase has been successful[1,2] along with the move away from H₂Se/H₂S[3]. The latter trend results in raised growth temperatures. Photo assisted growth for blue laser diodes structures has proved useful in lowering the temperatures to obtain high quality layers[4].

GaAs and InP p-type doping with DMZn is a well established process[5] despite zinc's high diffusion coefficient. Its use in more complex ternary and quaternary based device structures is also well developed.

SAFC Hitech has manufactured DMZn since 1985. During this time we have continued to incorporate and install the latest technologies in process equipment design and operational control to yield efficient and reliable plants that can run continuously. Built-in redundancy, modular design and multiple production locations ensure an uninterrupted supply of DMZn. SAFC Hitech has a simple, effective way of manufacturing DMZn from the basic raw materials ensuring impurity sources are at a minimum. Furthermore, SAFC Hitech employs specially developed purification processes for DMZn that yield the lowest levels of oxygen-containing species in the final product. The proven technique of adduct purification is also used to ensure the lowest levels of metallic and hydrocarbon impurities on a consistent basis.

DMZn is certified in-house using the latest analytical techniques, and periodic film growth ensures the validity of the methods and that the DMZn is capable of producing state-of-the-art device structures.

SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in DMZn.

DMZn is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for DMZn impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.