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SAFC Hitech® Diethylzinc is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.
To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg.
Synonyms
DEZ DEZn Et2Zn (C2H5)Zn Zn(C2H5)2 Diethylzinc
Applications
 Diethylzinc (DEZn) has been demonstrated to be useful as a II-VI source material and also as a p-type dopant of III-V alloys. Its decomposition characteristics closely match the optimum group VI source materials leading to maximum precursor compatibility. In ZnO deposition, DEZn has been shown to give highly orientated films with a number of oxidants[ 1, 2] that can also be effectively doped[ 3]. Similarly in the ZnSe/ZnS/ZnTe based growth systems high quality layers can be deposited. The latest Se, S and Te sources developed have complimented DEZn's physical characteristics and expanded its use in this area with improved film properties demonstrated[ 4, 5, 6]. GaAs and InP p-type doping with DEZn is a well established process[ 7] despite zinc's high diffusion coefficient. Its V.P. (12mmHg @ 20°C) is suitable for control of doping levels to be maintained even at low concentrations. DEZn may also be employed to dope more complex ternary and quaternary based device structures (including Sb materials[ 8]).
Our service can help you with your DEZn application requirements. » Contact SAFC
Manufacturing
SAFC Hitech has manufactured DEZn since 1985. During this time we have continued to incorporate and install the latest technologies in process equipment design and operational control to yield efficient and reliable plants that can run continuously. Built-in redundancy, modular design and multiple production locations ensure an uninterrupted supply of DEZn. SAFC Hitech has a simple, effective way of manufacturing DEZn from the basic raw materials ensuring impurity sources are at a minimum. Furthermore, SAFC Hitech employs specially developed purification processes for DEZn that yield the lowest levels of oxygen-containing species in the final product. The proven technique of adduct purification is also used to ensure the lowest levels of metallic and hydrocarbon impurities on a consistent basis.
DEZn is certified in-house using the latest analytical techniques, and periodic film growth ensures the validity of the methods and that the DEZn is capable of producing state-of-the-art device structures.
Our manufacturing expertise can provide high quality DEZn for you. » Contact SAFC
Analytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in DEZn.
DEZn is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for DEZn impurity detection.
Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.
Our analytical capabilities can validate the purity of DEZn for you. » Contact SAFC
References
- Highly orientated zinc oxide films grown by the oxidation of diethylzinc, S.K. Ghandhi et al, Appl. Phys. Lett., 37 5 (1980) 449-451.
- Highly orientated ZnO films prepared by MOCVD from diethylzinc and alcohols, S. Oda et al, Jpn. J. Appl. Phys., 24 12 (1985) 1607-1610.
- Textured aluminium-doped zinc oxide thin films from atmospheric chemical vapor deposition, J. Hu et al, J. Appl. Phys., 71 2 (1992) 880-890.
- Very low defect density ZnSe grown on GaAs by atmospheric pressure metal organic chemical vapor deposition, J.C. Chen et al, Mat. Chem. Phys., 45 (1996) 88-91.
- Crystalline quality and interface sharpness of ZnSe/ZnSSe superlattices on GaAs: analysis by Raman spectroscopy and X-ray diffractometry, J. Geurts et al, J. Cryst. Growth, 145 (1994) 602-608.
- Low temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low pressure metalorganic vapour phase epitaxy system, W. Taudt et al, J. Cryst. Growth, 145 (1994) 582-588.
- Zinc doping of MOCVD GaAs, RW Glew, J. Cryst. Growth, 68 (1984) 44-47.
- Growth of n- and p-type AlAsSb by metalorganic chemical vapor deposition, R.M. Biefeld et al, Appl. Phys. Lett., 68 7 (1996) 932-934.
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ORDER and/or ASK about Diethylzinc DEZn
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Identifiers of Diethylzinc DEZn
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Properties of Diethylzinc DEZn
» V.P. Equation: Log10P(mmHg) = 8.280 - 2109/T(K)
» Molecular formula: Zn(C2H5)2
» Formula Weight (Molar Mass): 123.49
» Boiling Point: 118°C
» Density @ 20°C: 1.200 g/ml
» Relative Density: N/A
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