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SAFC Hitech® Tris(diethylamino)(tert-butylimido)tantalum is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.
To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specialising in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.
Synonyms
TBTDET
(Et2N)3Ta(=NtBu)
((C2H5)2N)3Ta(=NC4H9)
((C2H5)2N)3Ta(=NC(CH3)3)
Applications
 Tris(diethylamino)(tert-butylimido)tantalum (TBTDET) is used as a tantalum source for the deposition of Ta 2O 5 and TaN based materials layers that have high potential application in both DRAM and CMOS logic devices.[ 1,2]. The physical properties of TBTDET are such that it may be used in conventional bubbling or direct liquid injection systems. TBTDET may be used in CVD and ALD to provide state-of-the-art films.[ 3-5] In addition plasma assisted growth has been demonstrated as highly effective.[ 2] In all applications contamination is a key factor and research work at SAFC Hitech has been successful in developing purification routes to remove metallic and organic impurities. The product purity is certified according to the specifications for each grade available.
Our service can help you with your TBTDET application requirements. » Contact SAFCManufacturing
SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Tris(diethylamino)(tert-butylimido)tantalum. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of TBTDET globally. SAFC Hitech is basic in TBTDET manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimise impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for TBTDET that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.
Tris(diethylamino)(tert-butylimido)tantalum is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the TBTDET is capable of producing high quality films for state of the art device fabrication.
Our manufacturing expertise can provide high quality TBTDET for you. » Contact SAFCAnalytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Tris(diethylamino)(tert-butylimido)tantalum.
TBTDET is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for TBTDET impurity detection.
Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.
Our analytical capabilities can validate the purity of TBTDET for you. » Contact SAFCReferences
- Alternative dielectrics to silicon dioxide for memory and logic devices, A. I. Kingon, Jon-Paul Maria and S. K. Streiffer, Nature, Vol 406, 2000, p1032-1038.
- Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition, H Kim et al, J. Appl. Phys. Vol 98, 2005, 014308 (8 pages).
- Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors, M Lemberger et al, Microelec. Rel., Vol 47, No 4-5, 2007, p635-639.
- High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal–organic precursor TBTDET, L Pinzelli et al, Microelec. Rel., Vol 47, No 4-5, 2007, p700-703.
- Chemical vapor deposition of tantalum nitride with tert-butylimino tris(diethylamino) tantalum and atomic hydrogen, X Zhao et al, Thin Solid Films, Vol 478, No 1-2, 2005, p188-195.
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ORDER and/or ASK about Tris(diethylamino)(tert-butylimido)tantalum
Ta2O5
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Identifiers of Tris(diethylamino)(tert-butylimido)tantalum
Ta2O5
» IUPAC name: Tris(diethylamino)(tert-butylimido)tantalum
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Properties of Tris(diethylamino)(tert-butylimido)tantalum
Ta2O5
» V.P. Equation: N/A
» Molecular Formula:
Ta(N(C2H5)2)3NC(CH3)3
» Formula Weight: 468.45
» Boiling Point: 95°C @ 0.5 mmHG
» Melting Point: N/A
» Density: 1.200 g/ml
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