Tetraethoxy(dimethylaminoethoxy)tantalum — Ta(OEt)4dmae

SAFC Hitech® Tetraethoxy(dimethylaminoethoxy)Tantalum is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specialising in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.

Tantalulm tetraethoxy dimethylaminoethoxide
Ta(OEt)4
Ta(OEt)4dmae
Ta(OEt)4(OC2H4NMe2)
Ta(OC2H5)4(OC2H4N(CH3)2)

Tetraethoxy(dimethylaminoethoxy)Tantalum (Ta(OEt)4dmae) is used as a tantalum source for the deposition of Ta2O5 based materials layers that have high potential application in both DRAM and CMOS logic devices.[1].

Ta(OEt)4dmae may be used in CVD[2] and the use of UV assisted CVD has been shown to be highly advantageous to provide state-of-the-art films.[3,4] The physical properties of Ta(OEt)4dmae are such that its favoured delivery method is direct liquid injection.

Specifically designed as an advanced molecular source[5] it may be used in combination with other compounds to fabricate complex metal oxides.

In all applications contamination is a key factor and research work at SAFC Hitech has been successful in developing purification routes to remove metallic and organic impurities. The product purity is certified according to the specifications for each grade available.

SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Tetraethoxy(dimethylaminoethoxy)Tantalum. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of Ta(OEt)4dmae globally. SAFC Hitech is basic in Ta(OEt)4dmae manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimize impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for Ta(OEt)4dmae that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.

Tetraethoxy(dimethylaminoethoxy)tantalum is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the Ta(OEt)4dmae is capable of producing high quality films for state of the art device fabrication.

SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Tetraethoxy(dimethylaminoethoxy)tantalum.

Ta(OEt)4dmae is sampled and analyzed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Ta(OEt)4dmae impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.