Contact SAFC   Extranet
SAFC Global
 

Pentakis(ethoxy)tantalum — Ta(OEt)5


SAFC Hitech® Pentakis(ethoxy)tantalum is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.
Synonyms
Tantalum ethoxide
Tantalum penta-ethoxide
Ta(OEt)5
Ta(OC2H5)5
TAET
Applications
SAFC Hitech® Manufacturing Image Pentakis(ethoxy)tantalum (Ta(OEt)5) is used as a tantalum source for the deposition of Ta2O5 dielectric layers which have a potential application in both DRAM and CMOS logic devices[1]. Tantalum is also a component in a number of complex oxide structures such as lead scandium tantalate, PST, [Pb(Sc0.5Ta0.5)O3] and strontium bismuth tantalate, SBT, [SrBi2Ta2O9][2]. It has been demonstrated that Ta(OEt)5, when used in combination with appropriate precursors is a useful tantalum source for both these complex oxide systems[3,4].

The physical properties of Ta(OEt)5 are such that it may be used for the deposition of tantalum containing oxides via several deposition techniques although its low vapour pressure imposes a number of limitations for grow rates.

In particular ALD has been used for Ta2O5 growth[5] with excellent conformal coverage due to the self limiting reaction process. For multimetal oxides the favoured techniques used is direct liquid injection CVD[6]. Use of Ta(OEt)5 solutions is advantageous due to the high moisture sensitivity of this product and also aids compatibility with other precursors employed.

In all applications contamination is a key factor and research work at SAFC Hitech has been successful in developing purification routes to remove metallic and organic impurities. The product purity is certified according to the specifications for each grade available.

Our service can help you with your Ta(OEt)5 application requirements.
» Contact SAFC
Manufacturing
SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Pentakis(ethoxy)tantalum. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of Ta(OEt)5 globally. SAFC Hitech is basic in Ta(OEt)5 manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimize impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for Ta(OEt)5 that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.

Pentakis(ethoxy)tantalum is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the Ta(OEt)5 is capable of producing high quality films for state of the art device fabrication.

Our manufacturing expertise can provide high quality Ta(OEt)5 for you.
» Contact SAFC
Analytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Pentakis(ethoxy)tantalum.

Ta(OEt)5 is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterization techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Ta(OEt)5 impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.

Our analytical capabilities can validate the purity of Ta(OEt)5 for you.
» Contact SAFC
References
  1. Alternative dielectrics to silicon dioxide for memory and logic devices, A. I. Kingon et al, Nature, Vol 406, 2000, p1032-1038.
  2. Molecular design of improved precursors for the MOCVD of electroceramic oxides, A. C. Jones, J. Mat. Chem., Vol 12, 2002, p2576-2590.
  3. Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5)O3 thin films using MOCVD, D. H. Liu et al, Materials Letters, Vol 28, 1996, p17-20.
  4. Precursors for the deposition of strontium bismuth tantalate films by direct liquid injection MOCVD, S. W. Kang et al, J. Electrochem. Soc., Vol 149, 2002, pC44-C49.
  5. Metallorganic chemical vapour deposition of Ta2O5 films, A. Porporati et al, J. Eur. Ceram. Soc., Vol 23, 2003, p247-251.
  6. Atomic layer epitaxy growth of tantalum oxide thin-films from Ta(OC2H5)5 and H2O, K. Kukli et al, J. Electrochem. Soc., Vol 142, 1995, p 1670-1675.
 
ORDER and/or ASK about Pentakis(ethoxy)tantalum
Ta(OEt)5

Pentakis(ethoxy)tantalum Structure

Identifiers of Pentakis
(ethoxy)tantalum
Ta(OEt)5
» IUPAC name:
Pentakis(ethoxy)
tantalum
» CAS Number:
6074-84-6

Pentakis(ethoxy)tantalum - Ta(OEt)5 Illustration

Properties of Pentakis
(ethoxy)tantalum
Ta(OEt)5
» V.P. Equation:
Log10P(mmHg) = 9.966 - 4288/T(K)
» Molecular Formula:
[Ta(OC2H5)5]2
» Formula Weight: 406.25
» Boiling Point: 140°C @ 0.1 mmHG
» Melting Point: 21°C
» Density: 1.560 g/ml