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SAFC Hitech® Pentakis(dimethylamino)tantalum is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.
To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.
Synonyms
Tantalum dimethylamide PDMAT TADMA Ta(NMe2)5 Ta(N(CH3)2)5
Applications
 Pentakis(dimethylamino)tantalum (PDMAT)[ 1,2] is most widely used as a tantalum source for TaN barrier layers to prevent copper diffusion into silicon in multilevel metallization semiconductor devices[ 3]. Despite the presence of N in the molecule, it is beneficial to use an additional nitrogen source (i.e. NH 3) to obtain high quality films. PDMAT may also be used to deposit Ta 2O 5 for dielectric applications in similar devices[ 4]. To achieve these films, an oxidizing source is used (i.e. H 2O/O 2). PDMAT reacts vigorously with such sources hence strict inert atmosphere conditions are recommended to avoid degradation and/or premature reaction. The volatility and thermal stability of the source[ 5] is such that PDMAT can be transported from a bubbler in conventional CVD/ALD equipment. Also it can be prepared as a solution for use in liquid injection systems. In all applications, contamination is a key factor and research work at SAFC Hitech has been successful in developing purification routes to remove metallic and organic impurities. Product purity is certified according to the specifications.
Our service can help you with your PDMAT application requirements. » Contact SAFC
Manufacturing
SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Pentakis(dimethylamino)tantalum. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of PDMAT globally. SAFC Hitech is basic in PDMAT manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimize impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for PDMAT that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.
Pentakis(dimethylamino)tantalum is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the PDMAT is capable of producing high quality films for state of the art device fabrication.
Our manufacturing expertise can provide high quality PDMAT for you. » Contact SAFC
Analytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Pentakis(dimethylamino)tantalum.
PDMAT is sampled and analyzed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterization techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for PDMAT impurity detection.
Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.
Our analytical capabilities can validate the purity of PDMAT for you. » Contact SAFC
References
- Surface chemistry of precursors for film growth: pentakisdimethylamido tantalum, DW Sloan et al, App. Surface Sci., Vol 143, 1999, p142-152.
- Electronic spectra of solid pentakis(dimethylamido) tantalum (V), H Hunkely et al, Inorg. Chem. Comm., Vol 4, No 5, 2001, p252-253.
- Effect of oxygen on the reactions in the Si/Ta/Cu metallisation system, T Laurila et al, J. Mater. Res., Vol 16, No 10, 2001, p2939-2946.
- Chemical vapor deposition of ultrathin Ta2O5 films using Ta[N(CHv)3]5, KA Son et al, App. Phys. Lett., Vol 72, No 10, 1998, p1187-1189.
- Metal-organic compounds containing metal-nitrogen bonds. Part III, DC Bradley et al, Can. J. Chem., Vol 40, 1962, p1355-1360.
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ORDER and/or ASK about Pentakis(dimethylamino) tantalum PDMAT
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Identifiers of Pentakis(dimethylamino) tantalum PDMAT
» IUPAC name: Pentakis(dimethylamino) tantalum
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Properties of Pentakis(dimethylamino) tantalum PDMAT
» V.P. Equation: Log10P(mmHg) = 11.30 - 4125/T(K)
» Molecular Formula: Ta(NC2H6)5
» Formula Weight: 401.35
» Boiling Point: 150 - 180°C
» Melting Point: 90°C @ 0.8 mmHg (sub)
» Density: 1.252 g/ml
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