Bis(2,2,6,6-tetramethylheptane-3,5-dionato)strontium — Sr(THD)2

SAFC Hitech® Bis(2,2,6,6-tetramethylheptane-3,5-dionato)strontium is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.

Synonyms

Strontium THD
Sr(THD)2
Strontium bis(dipivaloylmethane)
Sr(dpm)2
Sr(tBu(CO)CH(CO)tBu)2

Applications

Bis(2,2,6,6-tetramethylheptane-3,5-dionato)strontium (Sr(THD)2) is mainly used as a strontium source to deposit complex functional oxide materials ie SrBaxTiyOz, LaxSryMnO3, SrBi2Ta2O9. A wide variety of applications are accessible using Sr containing alloys[1,2] and using this precursor in combination with similar THD compounds numerous alloys are attainable via CVD.[3,4,5,6] The volatility is such that elevated temperatures must be applied to achieve good transport rates but care must be taken to avoid degradation.

Use of Sr(THD)2 in liquid injection CVD and ALD techniques has also proved effective to make a wide range of layers.[7,8,9]

In all applications, contamination is a key factor and research work at SAFC Hitech has been successful in developing a patented purification route to the unadducted product[10] that also removes metallic and organic impurities.

Product purity is certified according to the specifications for each grade available.

Our service can help you with your Sr(THD)2 application requirements.
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Manufacturing

SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Bis(2,2,6,6-tetramethylheptane-3,5-dionato)strontium. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of Sr(THD)2 globally. SAFC Hitech is basic in Sr(THD)2 manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimise impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for Sr(THD)2 that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.

Bis(2,2,6,6-tetramethylheptane-3,5-dionato)strontium is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the Sr(THD)2 is capable of producing high quality films for state of the art device fabrication.

Our manufacturing expertise can provide high quality Sr(THD)2 for you.
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Analytical Capabilities

SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Bis(2,2,6,6-tetramethylheptane-3,5-dionato)strontium.

Sr(THD)2 is sampled and analyzed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterization techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Sr(THD)2 impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.

Our analytical capabilities can validate the purity of Sr(THD)2 for you.
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References

Fatigue-free ferroelectric capacitors with platinum electrodes, CA Paz de Araujo et al, Nature, Vol 374, 1995, p627-630.
Ferroelectric thin films: Review of materials, properties, and applications, N Setter et al, J. Appl. Phys., Vol 100, 2006, p 051606 on line.
MOCVD for complex multicomponent thin films—a leading edge technology for next generation devices, M Schumacher et al, Mat. Sci. in Semiconductor Processing, Vol 5, No 2-3, 2002, p85-91.
MOCVD of coated conductors with electrically conductive buffer layers and their electrical field, O Stadel et al, 2006 J. Phys.: Conf. Ser. 43 207-210.
Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD), JF Roeder et al, J. Eur. Ceram. Soc., Vol 19, No 6-7, 1999, p1463-1466.
Dual-source chemical vapour deposition of strontium and zirconium β-diketonates for strontium zirconate perovskite films, M Andrieux et al, Appl. Surf. Sci., Vol 222, No 1-4, 2004, p351-356.
Injection MOCVD: ferroelectric thin films and functional oxide superlattices, F Weiss et al, Surface and Coatings Tech., Vol 133-134, 2000, p191-197.
Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O, Sang Woon Lee et al, Microelec. Eng. Vol 80, 2005, p158-161.
XPS and electroluminescence studies on SrS1-xSex and ZnS1-xSex thin films deposited by atomic layer deposition technique, J Ihanus et al, J. Crystal Growth, Vol 260, No 3-4, 2004, p440-446.
Epichem patent US6,248,928.