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Bis(η5-cyclopentadienyl)magnesium — Mg(C5H5)2


SAFC Hitech® Bis(η5-cyclopentadienyl)magnesium (Mg(C5H5)2) is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg.
Synonyms
Bis(cyclopentadienyl)magnesium
Magnesocene
Cp2Mg
MgCp2
(C5H5)2Mg
Applications
SAFC Hitech® Manufacturing ImageBis(η5-cyclopentadienyl)magnesium (Mg(C5H5)2) has been demonstrated to be useful as a II-VI source material and also as a p-type dopant of III-V alloys. Its low volatility (0.04mmHg at 25°C) allows controllable doping although heating above room temperature is required to achieve higher gas phase concentrations.

The growth of complex quaternary II-VI alloys including magnesium has been achieved using Mg(C5H5)2 with particular success in blue emitting devices. The latest Se, S and Te sources developed have complimented Mg(C5H5)2's physical characteristics and expand its use in this area with the demonstration of improved film properties. [1,2]

GaAs and InP p-type doping with Mg(C5H5)2 is a well established process[3,4] and its use as a dopant in nitride based systems is also now included in the standard process for blue ultra-high brightness LED's[5,6].

Our service can help you with your Mg(C5H5)2 application requirements.
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Manufacturing
SAFC Hitech has manufactured Mg(C5H5)2 since 1985. During this time we have continued to incorporate and install the latest technologies in process equipment design and operational control to yield efficient and reliable plants that can run continuously. Built-in redundancy, modular design and multiple production locations ensure an uninterrupted supply of Mg(C5H5)2. SAFC Hitech has a simple, effective way of manufacturing Mg(C5H5)2 from the basic raw materials ensuring impurity sources are at a minimum. Furthermore, SAFC Hitech employs specially developed purification processes for Mg(C5H5)2 that yield the lowest levels of oxygen-containing species in the final product. The proven technique of adduct purification is also used to ensure the lowest levels of metallic and hydrocarbon impurities on a consistent basis.

Mg(C5H5)2 is certified in-house using the latest analytical techniques, and periodic film growth ensures the validity of the methods and that the Mg(C5H5)2 is capable of producing state-of-the-art device structures.

Our manufacturing expertise can provide high quality Mg(C5H5)2 for you.
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Analytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Mg(C5H5)2.

Mg(C5H5)2 is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Mg(C5H5)2 impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.

Our analytical capabilities can validate the purity of Mg(C5H5)2 for you.
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References
  1. ZnMgSSe/ZnSSe/ZnSe heterostructures grown by metalorganic vapour phase epitaxy, J Sollner et al, J. Electron. Mat., 24 11 (1995) 1557-1561.
  2. Electrical characterisation of doped ZnSe based heterostructures grown by MOVPE, S Lampe et al, J. Cryst. Growth, 159 (1996) 293-297.
  3. The growth of magnesium doped GaAs by the OMPVE process, CR Lewis et al, J. Electron. Mat., 12 (1983) 507- 524.
  4. A study of p-type dopants for InP grown by adduct MOVPE, AW Nelson et al J. Cryst. Growth, 68 (1984) 102-110.
  5. Crystal growth of column III nitride semiconductors and their electrical and optical properties, I Akasaki et al J. Cryst. Growth, 163 (1996) 86-92.
  6. The blue laser diode, S Nakamura et al, Springer 1997, Book ISBN 3-540-61590-3.
 
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Bis(η5-cyclopentadienyl)magnesium
Mg(C5H5)2

Bis(n5-cyclopentadienyl)magnesium - Mg(C5H5)2 Structure

Identifiers of
Bis(η5-cyclopentadienyl)magnesium
Mg(C5H5)2
» IUPAC name:
Bis(η5-cyclopentadienyl)magnesium
» CAS Number:
1284-72-6


Properties of
Bis(n5-cyclopentadienyl)magnesium
Mg(C5H5)2
» V.P. Equation:
Log10P(mmHg) = 10.00 - 3372/T(K)
» Molecular formula:
Mg(C5H5)2
» Formula Weight (Molar Mass): 154.49 g/mol
» Boiling Point: 290°C
» Melting Point: 176°C
» Density: N/A
» Relative Density: N/A