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SAFC Hitech® Solution TMI is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.
To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg.
Synonyms
Solution TMI In(CH3)3 (CH3)2NC12H25 Solution Trimethylindium Solution Me3In Solution (CH3)3In
Applications
 SAFC Hitech has developed an efficient method to deliver trimethylindium (TMIn) via a novel precursor system. In this system, solid trimethylindium is suspended in an extremely low V.P. adduct solution. The evaporated TMIn is continuously replenished by dissolution during the usage. This proprietary 'solution' from SAFC Hitech[ 1-3] offers the following advantages:
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Constant output of TMIn over nearly the entire life of the source |
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Speedy response like other liquid metalorganics |
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V.P. effectively the same as TMIn, Log10P(mmHg) = 10.52 - 3014/T(K) |
This precursor system has also been observed to reduce the trace level of oxygen containing impurities due to the somewhat weaker In-O bond versus the In-N bond[ 4]. Some preliminary work on 808nm SQW laser structures grown using Solution TMI has shown better PL intensities than the lasers grown from the conventional TMIn source[ 5]. SIMS studies have shown oxygen levels as low as 3x10 16 cm -3 in LED applications. Solution TMI behaves more efficiently than the conventional TMIn source initially as measured by recent Epison studies. Delivery is stable even down to the last 5 grams of TMIn in the bubbler[ 4]. The following electrical properties are obtained with Solution TMI. InP films: n300 = 3.2 x 10 14 cm -3, (µ77K = 181,000 cm 2/Vs); InGaAs/InP lattice-matched films: n300 = 1.8 x 10 14 cm -3, (µ77K = 44,000 cm 2/Vs), FWHM substrate/ epilayer peak = 55 arcsec.
Our service can help you with your Solution TMI application requirements. » Contact SAFC
Manufacturing
SAFC Hitech has manufactured Solution TMI since 1985. During this time we have continued to incorporate and install the latest technologies in process equipment design and operational control to yield efficient and reliable plants that can run continuously. Built-in redundancy, modular design and multiple production locations ensure an uninterrupted supply of Solution TMI. SAFC Hitech has a simple, effective way of manufacturing Solution TMI from the basic raw materials ensuring impurity sources are at a minimum. Furthermore, SAFC Hitech employs specially developed purification processes for Solution TMI that yield the lowest levels of oxygen-containing species in the final product. The proven technique of adduct purification is also used to ensure the lowest levels of metallic and hydrocarbon impurities on a consistent basis.
Solution TMI is certified in-house using the latest analytical techniques, and periodic film growth ensures the validity of the methods and that the Solution TMI is capable of producing state-of-the-art device structures.
Our manufacturing expertise can provide high quality Solution TMI for you. » Contact SAFC
Analytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Solution TMI.
Solution TMI is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Solution TMI impurity detection.
Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.
Our analytical capabilities can validate the purity of Solution TMI for you. » Contact SAFC
References
- Method for deposition of metals. D.M. Frigo, W.Antonius, WO 93.03196 International Patent Publication., US Patent 5 232 869.
- Improved dosimetry for Metalorganic Vapor Phase Epitaxy from a solution of Trimethylindium, Frigo et al, Appl. Phys. Lett., 61 (1992) 531-3.
- A method for dosing solid sources for MOVPE - Excellent reproducibility of dosimetry from a saturated solution of Trimethylindium, Frigo et al, J. Cryst. Growth, 124 (1992) 99-105.
- Properties of Solution TMI&trade as an OMVPE source - M. Ravetz et al, IPRM XI, Danos May, 1999, IX OMVPE Florida May (1999).
- The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers - J.S. Roberts et al, J. Cryst. Growth, 195 (1998) 668-675.
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ORDER and/or ASK about Solution TMI
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Identifiers of Solution TMI
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Properties of Solution TMI
» V.P. Equation: Log10P(mmHg) = 10.52 - 3014/T(K)
» Molecular formula: In(CH3)3 & (CH3)2NC12H25
» Formula Weight (Molar Mass): 159.93
» Boiling Point: 133.8°C
» Melting Point: 88.4°C
» Density @ 20°C: 1.568 g/ml
» Relative Density: N/A
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