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SAFC Hitech® Tetrakis(dimethylamino)hafnium is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.
To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.
Synonyms
Hafnium dimethylamide HFDMA TDMAH Hf(NMe2)4 Hf(N(CH3)2)4
Applications
 Tetrakis(dimethylamino)hafnium (TDMAH) is used as a hafnium source for the deposition of HfO 2 dielectric layers. Hafnium oxide is a leading candidate to replace silicon dioxide as the gate oxide in metal oxide semiconductor field effect transistors (MOSFET)[ 1]. The thin film properties which make HfO 2 an attractive prospect for a gate oxide replacement also make it a potential insulating dielectric in the capacitive elements in memory devices such as DRAM[ 2]. TDMAH can be used for conventional CVD but due to its solid nature, has found more applications in liquid injection CVD[ 3]. However, TDMAH also deposits HfO 2 via atomic layer deposition (ALD) in a self-limiting process[ 4]. ALD deposits smooth, conformal layers with the additional benefit of precise thickness control, thus TDMAH is an idea choice for the deposition of high aspect ratio device architectures currently employed. The volatility and thermal stability of the source is such that TDMAH can be transported from a bubbler in conventional CVD/ALD systems[ 5]. Additionally it can be prepared as a solution for use in liquid injection systems. In all applications, contamination is a key factor and research work at SAFC Hitech has been successful in developing purification routes to remove metallic and organic impurities. Product is certified according to the specification.
Our service can help you with your TDMAH application requirements. » Contact SAFC
Manufacturing
SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Tetrakis(dimethylamino)hafnium. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of TDMAH globally. SAFC Hitech is basic in TDMAH manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimize impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for TDMAH that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.
Tetrakis(dimethylamino)hafnium is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the TDMAH is capable of producing high quality films for state-of-the-art device fabrication.
Our manufacturing expertise can provide high quality TDMAH for you. » Contact SAFC
Analytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Tetrakis(dimethylamino)hafnium. TDMAH is sampled and analyzed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterization techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for TDMAH impurity detection.
Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.
Our analytical capabilities can validate the purity of TDMAH for you. » Contact SAFC
References
- High-k gate dielectrics: current status and material properties considerations, D. Wilk et al, J. Appl. Phys., Vol 89, 2001, p5243-5275.
- In Technical Digest of the International Electron Device Meeting, M. Gutsche, IEEE, 18.6.1, Piscataway, NJ, 2001.
- Growth of hafnium oxide thin films by liquid injection MOCVD using alkylamide and hydoxylamide precursors, P.A. Williams et al, Chem. Vap. Deposition, Vol 9, No. 6, 2003, p309-314.
- Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors, R. Gordon et al, Chem. Mater., Vol 14, 2002, p4350-4358.
- Vapour pressure of Hf and Si precursors for HfxSi1-xO2 deposition evaluated by a standard gas technique, H. Machida et al, Jap. J. App. Phys., Vol 43, No. 3, 2004, p966-967.
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ORDER and/or ASK about Tetrakis(dimethylamino) hafnium TDMAH
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Identifiers of Tetrakis(dimethylamino) hafnium TDMAH
» IUPAC name: Tetrakis(dimethylamino) hafnium
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Properties of Tetrakis(dimethylamino) hafnium TDMAH
» V.P. Equation: Log10P(mmHg) = 9.9457 - 3270.8/T(K)
» Molecular Formula: Hf(N(CH3)2)4
» Formula Weight (Molar Mass): 354.79
» Boiling Point: 60°C @ 0.01 mmHg
» Melting Point: 26-29°C
» Density: 1.400 g/ml
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