Triethylgallium — TEGa

SAFC Hitech® Triethylgallium is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg.

TEG
TEGa
Et3Ga
(C2H5)3Ga
Ga(C2H5)3
Triethylgallium

Triethylgallium (TEGa) has a lower V.P. and so is less suitable than TMGa for atmospheric MOVPE applications. However TEGa has been used successfully to grow high purity GaAs with arsine at low pressure (with µ77K as high as 210000 cm2/Vs)[1]. In contrast to layers grown with TMGa, GaAs grown from TEGa remains n-type over the range of V-III ratios investigated[2]. This indicates that the use of TEGa greatly lowers carbon incorporation, and can be attributed to the facile β-elimination of ethyl radicals in the growth of GaAs[3]. Consequently TEGa is very useful for the growth of low carbon containing materials[2]. Finally for higher In content InGaN TEGa offers access to reduced growth temperature windows needed for these alloy compositions.

Recent collaborative research between SAFC Hitech and DRA (Malvern, UK) has shown that there is a direct correlation between the oxygen levels unintentionally incorporated into AlGaAs grown by CBE and trace quantities of diethylether present on the group III precursors[4]. Therefore we have developed improved adduct purification routes to low ether content TEGa.

The use of low ether content TEGa in combination with SAFC Hitech ether free DMEAA resulted in the growth of AlGaAs with oxygen levels below the SIMS detection limit (about 1 x 1016cm-3).

SAFC Hitech has manufactured TEGa since 1985. During this time we have continued to incorporate and install the latest technologies in process equipment design and operational control to yield efficient and reliable plants that can run continuously. Built-in redundancy, modular design and multiple production locations ensure an uninterrupted supply of TEGa. SAFC Hitech has a simple, effective way of manufacturing TEGa from the basic raw materials ensuring impurity sources are at a minimum. Furthermore, SAFC Hitech employs specially developed purification processes for TEGa that yield the lowest levels of oxygen-containing species in the final product. The proven technique of adduct purification is also used to ensure the lowest levels of metallic and hydrocarbon impurities on a consistent basis.

TEGa is certified in-house using the latest analytical techniques, and periodic film growth ensures the validity of the methods and that the TEGa is capable of producing state-of-the-art device structures.

SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in TEGa.

TEGa is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for TEGa impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.