Bis(2,2,6,6-tetramethylheptane-3,5-dionato)barium — Ba(THD)₂

SAFC Hitech® Bis(2,2,6,6-tetramethylheptane-3,5-dionato)barium is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.

To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specializing in fill quantities between 25g and 25kg. Customer specific containers and fill requests can also be considered.

Synonyms

Barium THD
Ba(THD)2
Barium bis(dipivaloylmethane)
Ba(dpm)2
Ba(tBu(CO)CH(CO)tBu)2

Applications

Bis(2,2,6,6-tetramethylheptane-3,5-dionato) Barium (Ba(THD)2) is mainly used as a barium source to deposit superconducting oxides based on YBa2Cu3Ox [1,2] and other complex functional oxide materials i.e. SrBaxTiyOz, BaFexOy.[3,4] This precursor is best suited to CVD of thin films with numerous alloys attainable in combination with similar THD compounds.[5] The volatility is such that elevated temperatures must be applied to achieve good transport rates [6] but care must be taken to avoid degradation. In some cases adducts have been employed to enhance precursor stability.[7]

Use of Ba(THD)2 in liquid injection CVD, plasma assisted CVD/CBE and ALD techniques has also proved effective to make a wide range of layers.[8,9,10]

In all applications, contamination is a key factor and research work at SAFC Hitech has been successful in developing purification routes to remove metallic and organic impurities.

Product purity is certified according to the specifications for each grade available.

Our service can help you with your Ba(THD)2 application requirements.
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Manufacturing

SAFC Hitech have installed the latest technologies in process equipment design and operational control to yield efficient and reliable production facilities for Bis(2,2,6,6-tetramethylheptane-3,5-dionato) Barium. Multiple production locations and appropriate modular systems ensure an uninterrupted supply of Ba(THD)2 globally. SAFC Hitech is basic in Ba(THD)2 manufacturing with capabilities to produce high purity raw materials, control contamination sources and minimize impurity levels in the final product. Furthermore, SAFC Hitech employs specially developed purification processes for Ba(THD)2 that provide the lowest levels of metallic and hydrocarbon impurity levels on a consistent basis.

Bis(2,2,6,6-tetramethylheptane-3,5-dionato)barium is certified in-house using the latest analytical techniques, and film growth ensures the validity of the methods and that the Ba(THD)2 is capable of producing high quality films for state-of-the-art device fabrication.

Our manufacturing expertise can provide high quality Ba(THD)2 for you.
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Analytical Capabilities

SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Bis(2,2,6,6-tetramethylheptane-3,5-dionato)barium.

Ba(THD)2 is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterization techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Ba(THD)2 impurity detection.

Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.

Our analytical capabilities can validate the purity of Ba(THD)2 for you.
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References

Metalorganic chemical vapour deposition of large-area high-quality YBa2Cu3O7-x films in a high-speed rotating disc reactor, CS Chern et al, Supercond. Sci. Technol., Vol 6, 1993, p460-463.
In situ growth of superconducting (Pb,Cu)2(Ba,Pb)2YCu2Oy epitaxial thin films by MOCVD, SV Samoilenkov et al, Physica C: Superconductivity, Vol 338, No 3, 2000, p189-196.
MOCVD for complex multicomponent thin films—a leading edge technology for next generation devices, M Schumacher et al, Mat. Sci. in Semiconductor Processing, Vol 5, No 2-3, 2002, p85-91.
Epitaxial and polycrystalline BaFe12O19 thin films grown by chemical vapour deposition, S Pignard et al, Thin Solid Films, Vol 350, No 1-2, 1999, p119-123.
Barium dipivaloylmethanate as the basic compound for the preparation of high temperature superconductivity films by the chemical vapour deposition technique, A Drozdov et al, Mat. Sci. and Eng. B, Vol 18, No 2, 1993, p139-140.
Kinetics of evaporation of barium THD precursors used for organometallic chemical vapor deposition (OMCVD) thin films, V Burtman et al, J. Crystal Growth, Vol 174, No 1-4, 1997, p801-805.
Investigations of barium beta -diketonate complexes used in chemical vapour deposition of high-Tc oxide films, IM Watson et al, Supercond. Sci. Technol., Vol 7, 1994, p672-680.
Injection MOCVD: ferroelectric thin films and functional oxide superlattices, F Weiss et al, Surface and Coatings Tech., Vol 133-134, 2000, p191-197.
Epitaxial-like Y1Ba2Cu3O7-d superconducting thin films synthesized by plasma enhanced chemical beam deposition techniques, BC Chung et al, Physica C: Superconductivity, Vol 227, No 3-4, 1994, p357-364.
Alkaline earth sulfide thin films grown by atomic layer epitaxy, M Tammenmaa et al, J. Crystal Growth, Vol 84, No 1, 1987, P151-154.