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SAFC Hitech® Trimethylaluminium is available in a wide range of ultra-high purity grades and is supplied to customers worldwide through our network of local distribution facilities.
To accommodate the range of customer requirements, SAFC Hitech has invested in production and filling facilities capable of handling a wide variety of different containers, specialising in fill quantities between 25g and 25kg.
Synonyms
Trimethylaluminium
Trimethylalane
TMA
TMAl
Me3Al
(CH3)3Al
Applications
 Trimethylaluminium (TMAl) is the most widely used aluminium precursor in MOVPE. The epitaxial films for which it is suited include AlGaAs, InGaAlP, AlInGaN, AlAsSb,AlAs,AlN, and AlGaN. The following references illustrate the application of TMAl in the fabrication of materials such as MQW, Lasers, LED's, and VCSEL's[1-5].TMAl reacts vigorously with oxygen to form firstly the volatile dimethylaluminium monomethoxide. The boiling point of Me 2AlOMe is 119-122°C/50mmHg, its melting point is 35°C and V.P. is 7.4mmHg @ 76°C. Oxygen incorporated in AlGaAs and AlAs/GaAs structures has been correlated to Me 2AlOMe levels in the TMAl, by SIMS and room temperature PL.[ 6] SAFC Hitech offers a number of high purity grades of TMAl – i.e. Solar, EpiPure™, Adduct and Electronic Grades. The different specifications offered ensure the optimum material performance can be achieved in a wide variety of customer devices.
Our service can help you with your Al(CH 3) 3 application requirements. » Contact SAFCManufacturing
SAFC Hitech has manufactured Al(CH3)3 since 1985. During this time we have continued to incorporate and install the latest technologies in process equipment design and operational control to yield efficient and reliable plants that can run continuously. Built-in redundancy, modular design and multiple production locations ensure an uninterrupted supply of Al(CH3)3. SAFC Hitech has a simple, effective way of manufacturing Al(CH3)3 from the basic raw materials ensuring impurity sources are at a minimum. Furthermore, SAFC Hitech employs specially developed purification processes for Al(CH3)3 that yield the lowest levels of oxygen-containing species in the final product. The proven technique of adduct purification is also used to ensure the lowest levels of metallic and hydrocarbon impurities on a consistent basis.
Al(CH3)3 is certified in-house using the latest analytical techniques, and periodic film growth ensures the validity of the methods and that the Al(CH3)3 is capable of producing state-of-the-art device structures.
Our manufacturing expertise can provide high quality Al(CH3)3 for you. » Contact SAFCAnalytical Capabilities
SAFC Hitech employs the latest analytical techniques with ultra-low detection limits for all the potential contaminants in Al(CH3)3.
Al(CH3)3 is sampled and analysed during and post manufacture to ensure the highest final product specification and reliability. The analysis is performed using a wide variety of physical characterisation techniques including ICP-OES, ICP-MS, NMR, TGA, vapour pressure, GC-AED and AA, on state-of-the-art tools specially upgraded for Al(CH3)3 impurity detection.
Considerable effort has been expended to develop suitable methodologies to provide accurate, reproducible data for the different grades of product available. As for many of its manufactured products, SAFC Hitech regularly reviews the analytical data it collects and can provide SPQ data to its customers.
Our analytical capabilities can validate the purity of Al(CH3)3 for you. » Contact SAFCReferences
- Optical studies of very high purity GaAs grown by MOCVD using a point-of-use arsine generator, J.P.Van der Ziel et al, Appl. Phys. Lett., 71 (1997) 791-793.
- Highly uniform and reproducible visible-to-near IR VCSEL's grown by MOVPE, Hou et al, Proc. SPIE-Int. Soc. Opt. Eng., 3003 (1997) 34-45.
- Electrical activation of carbon doped AlGaAs grown by MOVPE, Li et al, J. Cryst. Growth, 173 (1997) 302.
- Characterisation of oxygen and carbon in undoped AlGaAs grown by OMVPE, H. Kakinuma et al, Jpn. J. Appl. Phys. Part 1, 36 (1997) 23-28.
- Growth of heavily C-doped GaAs/AlGaAs MQW structures by MOVPE for 2-3 µm normal incidence photodetectors, Ma et al, J. Cryst. Growth, 170 (1997) 428-432.
- Oxygen incorporation in aluminium-based semiconductors grown by metalorganic vapour phase epitaxy, L.M. Smith et al, J. Cryst. Growth, 134 (1993) 140-146.
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ORDER and/or ASK about Trimethylaluminium
Al(CH3)3
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Identifiers of
Trimethylaluminium
Al(CH3)3
» IUPAC name: Trimethylaluminium
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Properties of
Trimethylaluminium
Al(CH3)3
» V.P. Equation:
Log10P(mmHg) = 8.22 - 2134/T(K)
» Molecular formula:
Al(CH3)3
» Formula Weight (Molar Mass): 72.09
» Boiling Point: 127°C
» Melting Point: 15.4°C
» Density @ 20°C: 0.752 g/ml
» Relative Density: N/A
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